irlb3034pbf datasheet

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The updated every day, always provide the best quality and speed. Datasheet: IRFIB6N60APBF Term & Condition 2N2 BCW68H : Package Type : SOT-23 Plastic-encapsulate Bipolar Transistors, PC : 330mW, Vceo : 45V, ic : 800mA. 0000074343 00000 n

0000033724 00000 n Note that current limitation arising from heating of the device leds may occur with some lead mounting arrangements. Part not recommended for use above this value.

1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel, ..2. irlb3034pbf.pdf Size:291K _infineon, 7.1. irlb3036gpbf.pdf Size:294K _international_rectifier, PD - 96275IRLB3036GPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 0000031600 00000 n 0000020512 00000 n 0000026681 00000 n BV = Rated breakdown voltage (1.3 factor accounts for voltage increase, Allowable rise in junction temperature, not to exceed T, ) = Transient thermal resistance, see Figures 13). Repetitive rating; pulse width limited by max. 0000023595 00000 n IRLB3034PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Utmel.

Part Status , IRL8114PBF , IRFIB8N50K 0000075049 00000 n MOSFET: Infineon Technologies IRLB3034PBF technical specifications, 0000030559 00000 n 0000055379 00000 n = Average power dissipation per single avalanche pulse. Rise Time What is the Power Dissipation ?the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action. | Privacy and cookie policy |

0000023943 00000 n , IRLB4030PBF DISCLOSURE: As an Amazon Associate I earn from qualifying purchases. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive, 7.3. irlb3036.pdf Size:251K _inchange_semiconductor, INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3036 IIRLB3036FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU. 0000075172 00000 n | 7N65KG-T2Q-T Operating Mode 0000023397 00000 n BDY45.MOD : 15 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA. What is the Packaging ?Semiconductor package is a carrier / shell used to contain and cover one or more semiconductor components or integrated circuits. Limited by TJmax, starting 25 , IAS = 195A, VGS =10V. What is the Qualification Status ?An indicator of formal certification of qualifications. attributes, DC Motor Drive2. The following Frequently Asked Questions (FAQ) are related to Infineon Technologies IRLB3034PBF. What is the Turn On Delay Time ?Turn-on delay, td(on), is the time taken to charge the input capacitance of the device before drain current conduction can start. 500 Watts 3.3v Thru 24v Transient Voltage Suppressor. What is the Operating Temperature ?The operating temperature is the range of ambient temperature within which a power supply, or any other electrical equipment, operate in. Optimized for Logic Level Drive2. 0000021963 00000 n KA HCF | 7N65KL-T2Q-T, BJT | 2SD2012-BP : 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB. | PACKAGES | 0000076609 00000 n Hard switched and High-frequency circuits. Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com), Purely a thermal phenomenon and failure occurs at a temperature far in, 2. , 2N7002

keyword : IRLB3034PBF schematic, equivalent, pinout, replacement, circuit, manual, High Efficiency Synchronous Rectification in SMPS, Hard Switched and High Frequency Circuits, Improved Gate, Avalanche and Dynamic dV/dt, Fully Characterized Capacitance and Avalanche, Enhanced body diode dV/dt and dI/dt Capability, Maximum Effective Transient Thermal Impedance, Junction-to-Case. s: Polarity: NPN ; Package Type: TO-220, ROHS COMPLIANT, PLASTIC, TO-220F, 3 PIN. | 7N65G-TQ2-T 0000021079 00000 n s: Technology: Film Capacitors ; Applications: General Purpose. 0000001833 00000 n 0000076456 00000 n 0000027409 00000 n IRLB3034PBF belongs to the family of HEXFET power MOSFETs that are manufactured by Infineon Technologies based on advanced HEXFET power MOSFET technology. IRLB3034PBF Transistors - FETs, MOSFETs - Single, IRLB3034PBF Discrete Semiconductor Products near me, IRLB3034PBF Transistors - FETs, MOSFETs - Single Datasheet. Fully Characterized Capacitance and Avalanche SOA6. , IRLB8721PBF

0000031241 00000 n Power Dissipation | 7N65L-TQ2-R NE , IRFIB7N50APBF | Disclaimer | , IRFIB7N50LPBF Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => N-Channel, 40V Single N-Channel HEXFET Power MOSFET In A TO-220AB Package, Similar parts: IRLB3034PbF, TK80A04K3L, CSD18503KCS, CSD18504KCS, CSD18532KCS, CSD18533KCS, CSD18534KCS, CSD18537NKCS, CSD18542KCS, CSD19503KCS, CSD19506KCS. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance, Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time, S p-n junction diode. High Efficiency Synchronous Rectification in SMPS3. 0000030758 00000 n

3. The advanced HEXFET power MOSFET technology. What is the Rise Time ?In electronics, when describing a voltage or current step function, rise time is the time taken by a signal to change from a specified low value to a specified high value. . 0000074739 00000 n CXA The function is 40V Single N-Channel HEXFET Power MOSFET.

Safe operation in Avalanche is allowed as long asT. | 7N65L-T2Q-T 0000076216 00000 n

Coss eff. Periodische Spitzensperrspannung repetitive peak reverse voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. | MANUFACTURER SITES | | SCR |

Operating Temperature | Terms and conditions | | 7N65G-TF3-T

Due to its low on-state resistance, fast switching speed, and high avalanche ruggedness, power MOSFET IRLB3034PBF is well suited for uninterruptible power supplies and synchronous rectification. This ranges from a minimum operating temperature, to a peak or maximum operating temperature, outside which, the power supply may fail. What is the Part Status ?Parts can have many statuses as they progress through the configuration, analysis, review, and approval stages. Utmel uses cookies to help deliver a better online experience. , IRLB8743PBF (ER) is a fixed capacitance that gives the same energy R is measured at TJ approximately 90C, MBRB2080CTTRRP : Schottky Rectifier 20 Amp, AFL5008SX-ES : 28V Input, Single Output Hybrid-high Reliability Dc/dc Converter, IRKJ71/04A : Add-a-pak GEN V Power Modules, AHP27009SYCH : 1-OUTPUT 90 W DC-DC REG PWR SUPPLY MODULE Specifications: Output Voltage: 8.82 to 9.18 volts ; Input Voltage: 160 to 400 volts ; Output Power: 90 watts (0.1206 HP) ; Operating Temperature: -55 to 125 C (-67 to 257 F), AUIRLR3110ZTR : 42 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0140 ohms ; Package Type: ROHS COMPLIANT, PLASTIC, DPAK-3 ; Number of units in IC: 1, IRHG6110PBF : 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB Specifications: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.7000 ohms ; PD: 2500 milliwatts ; Package Type: HERMETIC SEALED, CERAMIC, MO-036AB, 14 PIN ; Number of units in IC: 4, JANSR2N7587U3 : 22 A, 100 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0850 ohms ; Number of units in IC: 1, OM6010SMT : 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.1800 ohms ; Package Type: HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28 ; Number of units in IC: 1, OM8505SCPPBF : 4.1 V-5 V ADJUSTABLE POSITIVE LDO REGULATOR, 0.4 V DROPOUT, MSFM5 Specifications: Regulator Type: Low Dropout ; Output Polarity: Positive ; Output Voltage Type: Adjustable / Variable ; Package Type: Other, TO-258AA, MO-078AA, 5 PIN ; Life Cycle Stage: ACTIVE ; Output Voltage: 4.1 to 5 volts ; IOUT: 3 amps ; Dropout Voltage: 0.4000 volts. , IRFIBC30GPBF 0000074377 00000 n Coefficient RDS(on) VGS(th) IDSS IGSS RG(int) Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance, Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. 0000015766 00000 n s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 10000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 16 volts ; Leakage Current: 1200 microamps ; Mounting Style: Through Hole ; Operating Temperature:. 0000076691 00000 n

High Speed Power Switching5. MC 0000003979 00000 n Lead-Free, High Efficiency Synchronous Rectification in SMPS. Cookies Policy,

| IGBT | When browsing and using our website, Utmel also collects, stores and/or processes personal data, please read our High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BU807 VCEO Collector-Emitter Voltage : BU807 VEBO IC ICP PC TJ TSTG Emitter-Base Voltage.

DZ2J033 : 3.3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. 0000002818 00000 n 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive, 7.2. irlb3036pbf.pdf Size:284K _international_rectifier, PD - 97357IRLB3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. %PDF-1.4 % 153 0 obj <> endobj xref 153 72 0000000016 00000 n 0000022593 00000 n 0000075092 00000 n 2SC

rectifierSAFEIRseries has been optimized for very low forward voltage drop, with moderate leakage. 1N4

0000074288 00000 n It offers a large amount of data sheet, You can free PDF files download. C, Maximum Drain-Source On-State Resistance (Rds): 0.0017 0000030499 00000 n

BF PCMP4834Q333 : CAP,MET POLYPROPYLENE,33NF,250VDC,5% -TOL,5% +TOL. 0000007951 00000 n 0000011008 00000 n

Uninterruptible Power Supply4. , IRLB3036GPBF Diodes - Variable Capacitance (Varicaps, Varactors). temperature Bond wire current limit is 195A. Packaging , IRL8113SPBF | 7N65L-TA3-T | MOBILE APPS | [emailprotected] Reflow Temperature-Max (s). 0000023199 00000 n V, Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R, Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Tube, Trans MOSFET P-CH 60V 90A 3-Pin(3+Tab) TO-220AB. | 7N65G-T2Q-T The material of the shell can be metal, plastic, glass or ceramic.

TDA 60EPS16 : 1600V 60A Std. 0000019441 00000 n 0000001935 00000 n Hard Switched and High Frequency Circuits, Benefits1. 0000018522 00000 n Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free, Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, or M3 screw, EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy, V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. 0000031876 00000 n 74H 0000075976 00000 n Please send RFQ , we will respond immediately. 0000023808 00000 n

BDY26.MOD : 6 A, 180 V, NPN, Si, POWER TRANSISTOR, TO-204AA. IRF BC 0000010700 00000 n The three parts on the right have similar specifications to Infineon Technologies & IRLB3034PBF. and

s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN. ISD 195A, di/dt 841A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.

0000074684 00000 n 0000018485 00000 n UA. 0000027089 00000 n 5. Please send RFQ , we will respond immediately. 0000004814 00000 n Turn On Delay Time

| 7N65G-TF1-T Element Configuration 0000015814 00000 n 0000020658 00000 n Very Low RDS(ON) at 4.5V VGS3. JFM38A12-0175-4F : DATACOM TRANSFORMER FOR 10/100/1000 BASE-T APPLICATION(S). to find out more.

| 7N65L-TQ2-T | 7N65L-TF2-T BU807 : NPN Epitaxial Silicon Darlington Transistor. 0000002626 00000 n Download datasheets and manufacturer documentation for Infineon Technologies IRLB3034PBF. What is the RoHS Status ?RoHS means Restriction of Certain Hazardous Substances in the Hazardous Substances Directive in electrical and electronic equipment.

s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F). 0000024213 00000 n trailer<]>> startxref 0 %%EOF 154 0 obj <> endobj 224 0 obj <. , IRLB3813PBF , IRLB3036PBF 0000026493 00000 n Applications1.

| 7N65G-TQ2-R 0000015714 00000 n 0000075735 00000 n USB0803thruUSB0824 : TVS/Zener Protection. 0000010102 00000 n s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.

ECEC1CU103K : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 16 V, 10000 uF, THROUGH HOLE MOUNT. 0000074773 00000 n | SMD CODE | 0000031091 00000 n

7N65L-TF3-T | 7N65G-TA3-T Improved Gate, Avalanche and Dynamic dV/dt Ruggedness5. 2SD1884 : NPN Triple Diffused Planar Silicon Transistor, Color TV Horizontal Deflection Output Application. ADC ST TL Qualification Status Ohm, IRLB3034PBF . 0000074245 00000 n IRLB DataSheet39.com is an Online Datasheet PDF Search Site. 0000020921 00000 n Your Email address will not be published. DD800S33K2 : . 0000015677 00000 n

LM Transistor Equivalent Substitute - MOSFET Cross-Reference Search, ..1. irlb3034pbf.pdf Size:291K _international_rectifier, PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 2SA 2SC3709 : NPN Epitaxial Type ( High Current Switching Applications ). STK KIA The following parts are popular search parts in Discrete Semiconductor Products. parameters and parts with similar specifications to Infineon Technologies IRLB3034PBF. if you agree on our use of cookies please click continue. Typical applications are in input rectification and these products are designed to be used with International Rectifier Switches and Output Rectifiers. , IRL8113LPBF

junction temperature. 0000026438 00000 n | Contact. Maximum Drain-Source Voltage |Vds|: 40 = 195A, VGS = 195A di/dt = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD).

0000020295 00000 n 0000006788 00000 n Transistor Equivalent Substitute. The 60EPS. | 7N65G-TF2-T | 7N65L-TF1-T FN1A3Q : Medium Speed Switching Resistor Built-in Type PNP Transistor Mini Mold. What is the Operating Mode ?A phase of operation during the operation and maintenance stages of the life cycle of a facility. current Grenzlastintegral der Diode value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode Isolations-Prfspannung insulation test voltage Teilentladungs-Aussetzspannung partial discharge.

, IRLB8748PBF Enhanced body diode dV/dt and dI/dt Capability7.

LA 0000019404 00000 n BU 0000074641 00000 n 0000033462 00000 n The glass passivation technology used has reliable operation 150 C junction temperature.

Privacy Policy IRLB3034PBF belongs to the family of HEXFET power MOSFETs that are manufactured by Infineon Technologies based on advanced HEXFET power MOSFET technology. 0000005632 00000 n s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.0450 ohms ; Number of units in IC: 6. RoHS Status 0000055106 00000 n Equation below based on circuit and waveforms shown in Figures 16a, 16b. You can see what cookies we serve and how to set your preferences in our | MOSFET | 0000026906 00000 n IRLB3034PBF Recovery Diode in a TO-247AC (2-Pin)package. What is the Element Configuration ?The distribution of electrons of an atom or molecule (or other physical structure) in atomic or molecular orbitals. , IRLB8314PBF 0000009072 00000 n 0000075271 00000 n 0000012183 00000 n s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN. V, Maximum Junction Temperature (Tj): 175 MC200SP56 : 56 A, 200 V, 0.045 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. (TR) is a fixed capacitance that gives the same charging time, Coss eff. 0000075491 00000 n Superior R*Q at 4.5V VGS4.

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